污水處理設備 污泥處理設備 水處理過濾器 軟化水設備/除鹽設備 純凈水設備 消毒設備|加藥設備 供水/儲水/集水/排水/輔助 水處理膜 過濾器濾芯 水處理濾料 水處理劑 水處理填料 其它水處理設備
深圳市邁瑞施電子技術有限公司
深圳市邁瑞施電子技術有限公司
SKKT273/18E品牌：西門康又名賽米控Semikron；
產地：*；
PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發射極控制二極管
SKKT273/18E品牌：西門康又名賽米控Semikron；
SKKT273/18E產地：*；
PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發射極控制二極管
PrimePACK™2 module with Trench/Fieldstop IGBT3, enlarged Emitter Controlled 4 diode
初步數據 / Preliminary Data
深圳市邁瑞施電子技術有限公司：一家專業做進口 * 現貨 批發零售的企業，
更詳細的內容 敬請登錄公司了解。www.mrs2003。。ｃｏｍ
VCES = 1800V
IC nom = 273A / ICRM = 273A
典型應用 Typical Applications
• 斬波應用 • Chopper Applications
電氣特性 Electrical Features
• 提高工作結溫 Tvj op • Extended Operation Temperature Tvj op
• 高直流電壓穩定性 • High DC Stability
• 高短路能力，自限制短路電流 • High Short Circuit Capability, Self Limiting Short
• VCEsat 帶正溫度系數 Circuit Current
• VCEsat with positive Temperature Coefficient
• 低 VCEsat • Low VCEsat
機械特性 Mechanical Features
• 4 kV 交流 1分鐘 絕緣 • 4 kV AC 1min Insulation
• 封裝的 CTI > 400 • Package with CTI > 400
• 高爬電距離和電氣間隙 • High Creepage and Clearance Distances
• 高功率循環和溫度循環能力 • High Power and Thermal Cycling Capability
• 高功率密度 • High Power Density
• 低熱阻襯底 • Substrate for Low Thermal Resistance
SKD210/08 SKKD105F10 SKKH273/16E SKKT330/18E SKM300GB12E4
SKD60/08 SKKD162/20H4 SKKH460/22EH4 SKM100GB063D SKM400GAL125D
SKD60/12 SKKD162/22H4 SKKH570/12E SKM100GB123D SKM400GAL126D
SKM600GA12V SKM75GB063D SKM400GB12V SKM145GAL176D SKM400GAR12T4
SKM600GA176D SKM75GB123D SKM400GB176D SKM145GAR123D SKM400GB066D
SKM600GAL126D SKM75GB12T4 SKM400GB176DL3 SKM145GB066D SKM400GB123D
SKM600GB066D SKM75GB12V SKM400GM12T4 SKM145GB123D SKM400GB125D
SKM600GB126D SKM75GB173D SKM40GAH123DTS95036 SKM145GB176D SKM400GB126D
SKM75GAL063D SKM75GB176D SKM40GD123D SKM150GAL123D SKM400GB12E4
IGBT, 斬波器 / IGBT-Chopper
zui大額定值 / Maximum Rated Values
集電極－發射極電壓 | Tvj = 25°C | VCES |
| 1200 |
| V |
Collector-emitter voltage | ||||||
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連續集電極直流電流 | TC = 100°C, Tvj max = 175°C | IC nom |
| 323 |
| A |
Continuous DC collector current | ||||||
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集電極重復峰值電流 | tP = 1 ms | ICRM |
| 1800 |
| A |
Repetitive peak collector current | ||||||
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Total power dissipation |
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柵極－發射極峰值電壓 |
| VGES |
| +/-20 |
| V |
Gate-emitter peak voltage | ||||||
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特征值 / Characteristic Values |
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| min. | typ. | max. |
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集電極－發射極飽和電壓 | IC = 900 A, VGE = 15 V |
| Tvj = 25°C |
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| 1,70 | 2,05 | V |
Collector-emitter saturation voltage | IC = 900 A, VGE = 15 V |
| Tvj = 125°C | VCE sat |
| 2,00 |
| V |
| IC = 900 A, VGE = 15 V |
| Tvj = 150°C |
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| 2,10 |
| V |
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柵極閾值電壓 | IC = 33,0 mA, VCE = VGE, Tvj = 25°C |
| VGEth | 5,0 | 5,8 | 6,5 | V | |
Gate threshold voltage |
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柵極電荷 | VGE = -15 V ... +15 V |
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| QG |
| 6,40 |
| µC |
Gate charge |
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內部柵極電阻 | Tvj = 25°C |
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| RGint |
| 1,2 |
| W |
Internal gate resistor |
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輸入電容 | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V |
| Cies |
| 54,0 |
| nF | |
Input capacitance |
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反向傳輸電容 | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V |
| Cres |
| 2,80 |
| nF | |
Reverse transfer capacitance |
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開通延遲時間(電感負載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | td on |
| 0,20 |
| µs |
Turn-on delay time, inductive load | VGE = ±15 V |
| Tvj = 125°C | 0,22 | µs | |||
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| RGon = 1,6 W |
| Tvj = 150°C |
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| 0,22 |
| µs |
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上升時間(電感負載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | tr |
| 0,14 |
| µs |
Rise time, inductive load | VGE = ±15 V |
| Tvj = 125°C |
| 0,15 |
| µs | |
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| RGon = 1,6 W |
| Tvj = 150°C |
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| 0,15 |
| µs |
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關斷延遲時間(電感負載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | td off |
| 0,70 |
| µs |
Turn-off delay time, inductive load | VGE = ±15 V |
| Tvj = 125°C | 0,80 | µs | |||
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| RGoff = 1,6 W |
| Tvj = 150°C |
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| 0,85 |
| µs |
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下降時間(電感負載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | tf |
| 0,20 |
| µs |
Fall time, inductive load | VGE = ±15 V |
| Tvj = 125°C |
| 0,40 |
| µs | |
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| RGoff = 1,6 W |
| Tvj = 150°C |
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| 0,45 |
| µs |
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開通損耗能量 (每脈沖) | IC = 900 A, VCE = 600 V, LS = 45 nH | Tvj = 25°C |
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| 50,0 |
| mJ | |
Turn-on energy loss per pulse | VGE = ±15 V, di/dt = 4800 A/µs (Tvj = 150°C) Tvj = 125°C | Eon | 70,0 | mJ | ||||
| RGon = 1,6 W |
| Tvj = 150°C |
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| 80,0 |
| mJ |
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關斷損耗能量 (每脈沖） | IC = 900 A, VCE = 600 V, LS = 45 nH | Tvj = 25°C |
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| 150 |
| mJ | |
Turn-off energy loss per pulse | VGE = ±15 V, du/dt = 2700 V/µs (Tvj = 150°C)Tvj = 125°C | Eoff | 200 | mJ | ||||
| RGoff = 1,6 W |
| Tvj = 150°C |
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| 205 |
| mJ |
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短路數據 | VGE £ 15 V, VCC = 800 V |
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SC data | VCEmax = VCES -LsCE ·di/dt | tP £ 10 µs, Tvj = 150°C | 3600 | A | ||||
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結－外殼熱阻 | 每個 IGBT / per IGBT |
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| RthJC |
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| 29,5 | K/kW |
Thermal resistance, junction to case |
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外殼－散熱器熱阻 | 每個 IGBT / per IGBT |
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| RthCH |
| 16,0 |
| K/kW |
Thermal resistance, case to heatsink | lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K) |
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在開關狀態下溫度 |
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| Tvj op | -40 |
| 150 | °C |
Diode-斬波器 / Diode-Chopper
zui大額定值 / Maximum Rated Values
反向重復峰值電壓 | Tvj = 25°C | VRRM |
| 1200 |
| V | |||||
特征值 / Characteristic Values |
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| min. | typ. | max. |
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正向電壓 | IF = 900 A, VGE = 0 V | Tvj = 25°C |
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| 1,65 | 2,15 | V | ||||
Forward voltage | IF = 900 A, VGE = 0 V | Tvj = 125°C | VF |
| 1,55 |
| V | ||||
| IF = 900 A, VGE = 0 V | Tvj = 150°C |
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| 1,50 |
| V | ||||
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恢復電荷 | IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C) | Tvj = 25°C |
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| 110 |
| µC | ||||
Recovered charge | VR = 600 V | Tvj = 125°C | Qr |
| 200 |
| µC | ||||
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| Tvj = 150°C |
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| 225 |
| µC | ||||
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反向恢復損耗（每脈沖） | IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C) | Tvj = 25°C |
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| 50,0 |
| mJ | ||||
Reverse recovery energy | VR = 600 V | Tvj = 125°C | Erec |
| 90,0 |
| mJ | ||||
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| Tvj = 150°C |
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| 105 |
| mJ | ||||
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結－外殼熱阻 | 每個二極管 / per diode |
| RthJC |
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| 37,0 | K/kW | ||||
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反向二極管 / Diode, Reverse
zui大額定值 / Maximum Rated Values
反向重復峰值電壓 | Tvj = 25°C | VRRM |
| 1200 |
| V |
Repetitive peak reverse voltage | ||||||
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連續正向直流電流 |
| IF |
| 120 |
| A |
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賽米控可控硅、晶閘管、IGBT模塊，西門康可控硅、晶閘管、IGBT模塊。
中文資料，技術參數， PDF datasheet,圖片。
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