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SKKT273/16E

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產品型號SKKT273/16E

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所在地深圳市

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更新時間：2016-07-02 14:57:39瀏覽次數：292次

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深圳市邁瑞施電子技術有限公司

經營模式：代理商

商鋪產品：987條

所在地區：廣東深圳市

聯系人：曾先生（銷售技術經理）

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產品簡介

SKKT273/16E品牌：西門康又名賽米控Semikron；
產地：*；
PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發射極控制二極管

詳細介紹

SKKT273/16E品牌：西門康又名賽米控Semikron；

SKKT273/16E產地：*；

PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發射極控制二極管

PrimePACK™2 module with Trench/Fieldstop IGBT3, enlarged Emitter Controlled 4 diode

初步數據 / Preliminary Data

深圳市邁瑞施電子技術有限公司：一家專業做進口 * 現貨批發零售的企業，

更詳細的內容敬請登錄公司了解。www.mrs2003。。ｃｏｍ

VCES = 1800V

IC nom = 273A / ICRM = 273A

典型應用 Typical Applications

• 斬波應用 • Chopper Applications

電氣特性 Electrical Features

• 提高工作結溫 Tvj op • Extended Operation Temperature Tvj op

• 高直流電壓穩定性 • High DC Stability

• 高短路能力，自限制短路電流 • High Short Circuit Capability, Self Limiting Short

• VCEsat 帶正溫度系數 Circuit Current

• VCEsat with positive Temperature Coefficient

• 低 VCEsat • Low VCEsat

機械特性 Mechanical Features

• 4 kV 交流 1分鐘絕緣 • 4 kV AC 1min Insulation

• 封裝的 CTI > 400 • Package with CTI > 400

• 高爬電距離和電氣間隙 • High Creepage and Clearance Distances

• 高功率循環和溫度循環能力 • High Power and Thermal Cycling Capability

• 高功率密度 • High Power Density

• 低熱阻襯底 • Substrate for Low Thermal Resistance

SKM600GA12V SKM75GB063D SKM400GB12V SKM145GAL176D SKM400GAR12T4

SKM600GA176D SKM75GB123D SKM400GB176D SKM145GAR123D SKM400GB066D

SKM600GAL126D SKM75GB12T4 SKM400GB176DL3 SKM145GB066D SKM400GB123D

SKM600GB066D SKM75GB12V SKM400GM12T4 SKM145GB123D SKM400GB125D

SKM600GB126D SKM75GB173D SKM40GAH123DTS95036 SKM145GB176D SKM400GB126D

SKM75GAL063D SKM75GB176D SKM40GD123D SKM150GAL123D SKM400GB12E4

IGBT, 斬波器 / IGBT-Chopper

zui大額定值 / Maximum Rated Values

集電極－發射極電壓	Tvj = 25°C	VCES	1200	V
Collector-emitter voltage	Tvj = 25°C	VCES	1200	V
Collector-emitter voltage

連續集電極直流電流	TC = 100°C, Tvj max = 175°C	IC nom	323	A
Continuous DC collector current	TC = 100°C, Tvj max = 175°C	IC nom	323	A
Continuous DC collector current

集電極重復峰值電流	tP = 1 ms	ICRM	1800	A
Repetitive peak collector current	tP = 1 ms	ICRM	1800	A
Repetitive peak collector current

Total power dissipation
Total power dissipation

柵極－發射極峰值電壓		VGES	+/-20	V
Gate-emitter peak voltage		VGES	+/-20	V
Gate-emitter peak voltage

集電極－發射極飽和電壓	IC = 900 A, VGE = 15 V		Tvj = 25°C			1,70	2,05	V
Collector-emitter saturation voltage	IC = 900 A, VGE = 15 V		Tvj = 125°C	VCE sat		2,00		V
	IC = 900 A, VGE = 15 V		Tvj = 150°C			2,10		V

柵極閾值電壓	IC = 33,0 mA, VCE = VGE, Tvj = 25°C			VGEth	5,0	5,8	6,5	V
Gate threshold voltage	IC = 33,0 mA, VCE = VGE, Tvj = 25°C			VGEth	5,0	5,8	6,5	V
Gate threshold voltage

柵極電荷	VGE = -15 V ... +15 V			QG		6,40		µC
Gate charge	VGE = -15 V ... +15 V			QG		6,40		µC
Gate charge

內部柵極電阻	Tvj = 25°C			RGint		1,2		W
Internal gate resistor	Tvj = 25°C			RGint		1,2		W
Internal gate resistor

輸入電容	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cies		54,0		nF
Input capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cies		54,0		nF
Input capacitance

反向傳輸電容	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cres		2,80		nF
Reverse transfer capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cres		2,80		nF
Reverse transfer capacitance



開通延遲時間(電感負載)	IC = 900 A, VCE = 600 V		Tvj = 25°C	td on		0,20		µs
Turn-on delay time, inductive load	VGE = ±15 V		Tvj = 125°C			0,22		µs

	RGon = 1,6 W		Tvj = 150°C			0,22		µs

上升時間(電感負載)	IC = 900 A, VCE = 600 V		Tvj = 25°C	tr		0,14		µs
Rise time, inductive load	VGE = ±15 V		Tvj = 125°C	tr		0,15		µs
Rise time, inductive load	VGE = ±15 V		Tvj = 125°C			0,15		µs
	RGon = 1,6 W		Tvj = 150°C			0,15		µs

關斷延遲時間(電感負載)	IC = 900 A, VCE = 600 V		Tvj = 25°C	td off		0,70		µs
Turn-off delay time, inductive load	VGE = ±15 V		Tvj = 125°C			0,80		µs

	RGoff = 1,6 W		Tvj = 150°C			0,85		µs

下降時間(電感負載)	IC = 900 A, VCE = 600 V		Tvj = 25°C	tf		0,20		µs
Fall time, inductive load	VGE = ±15 V		Tvj = 125°C	tf		0,40		µs
Fall time, inductive load	VGE = ±15 V		Tvj = 125°C			0,40		µs
	RGoff = 1,6 W		Tvj = 150°C			0,45		µs

開通損耗能量 (每脈沖)	IC = 900 A, VCE = 600 V, LS = 45 nH		Tvj = 25°C			50,0		mJ
Turn-on energy loss per pulse	VGE = ±15 V, di/dt = 4800 A/µs (Tvj = 150°C) Tvj = 125°C			Eon		70,0		mJ
	RGon = 1,6 W		Tvj = 150°C			80,0		mJ


SC data	VCEmax = VCES -LsCE ·di/dt	tP £ 10 µs, Tvj = 150°C				3600		A
SC data	VCEmax = VCES -LsCE ·di/dt	tP £ 10 µs, Tvj = 150°C				3600		A
結－外殼熱阻	每個 IGBT / per IGBT			RthJC			29,5	K/kW
Thermal resistance, junction to case	每個 IGBT / per IGBT			RthJC			29,5	K/kW
Thermal resistance, junction to case

外殼－散熱器熱阻	每個 IGBT / per IGBT			RthCH		16,0		K/kW
Thermal resistance, case to heatsink	lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K)			RthCH		16,0		K/kW
Thermal resistance, case to heatsink	lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K)

在開關狀態下溫度				Tvj op	-40		150	°C

Diode-斬波器 / Diode-Chopper

zui大額定值 / Maximum Rated Values

反向重復峰值電壓	Tvj = 25°C		VRRM		1200				V
特征值 / Characteristic Values				min.		typ.	max.
正向電壓	IF = 900 A, VGE = 0 V	Tvj = 25°C				1,65	2,15	V
Forward voltage	IF = 900 A, VGE = 0 V	Tvj = 125°C	VF			1,55		V
	IF = 900 A, VGE = 0 V	Tvj = 150°C				1,50		V


恢復電荷	IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C)	Tvj = 25°C				110		µC
Recovered charge	VR = 600 V	Tvj = 125°C	Qr			200		µC
		Tvj = 150°C				225		µC

反向恢復損耗（每脈沖）	IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C)	Tvj = 25°C				50,0		mJ
Reverse recovery energy	VR = 600 V	Tvj = 125°C	Erec			90,0		mJ
		Tvj = 150°C				105		mJ

結－外殼熱阻	每個二極管 / per diode		RthJC				37,0	K/kW